How does the width of the potential barrier change under forward bias conditions_____________?
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Answer: B. Decreases
Explanation
Forward bias applies external voltage opposing the internal built-in electric field of a diode. This opposing voltage lowers the potential energy barrier hindering major carrier diffusion. Reduced barrier heights allow electrons and holes to cross easily narrowing depletion regions. P-n junction diodes permit high current flow only when forward biased past threshold voltages. Depletion regions act as insulating barriers until external biases modify their widths. Silicon diodes typically require approximately zero point seven volts of forward bias.
Forward biasing enables light-emitting diodes to recombine carriers and emit optical photons. Circuit designers forward bias diodes to construct signal rectifiers and logic gates. Understanding barrier width changes helps engineers model semiconductor switching speeds. Increases describes depletion region behavior under reverse bias conditions instead. Remains same ignores the active voltage adjustments altering internal junction widths. No effect contradicts fundamental semiconductor physics principles regarding bias voltages.
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